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SIT5021 Datasheet(PDF) 2 Page - SiTime Corp.

Part # SIT5021
Description  1-220 MHz High Performance Differential (VC) TCXO
PDF  13 Pages
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Manufacturer  SITIME [SiTime Corp.]
Direct Link  https://www.sitime.com
Logo SITIME - SiTime Corp.

SIT5021 Datasheet(HTML) 2 Page - SiTime Corp.

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The Smart Timing Choice
The Smart Timing Choice
SiT5021
1-220 MHz High Performance Differential (VC) TCXO
Rev. 1.5
Page 2 of 8
www.sitime.com
Electrical Characteristics (continued)
Parameter and Conditions
Symbol
Min.
Typ.
Max.
Unit
Condition
LVDS, DC and AC Characteristics
Current Consumption
Idd
–
47
55
mA
Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE Disable Supply Current
I_OE
–
–
35
mA
OE = Low
Differential Output Voltage
VOD
250
350
450
mV
See Figure 2
Output Disable Leakage Current
I_leak
–
–
1
AOE = Low
Standby Current
I_std
–
–
100
A
ST = Low, for all Vdds
VOD Magnitude Change
VOD
–
–
50
mV
See Figure 2
Offset Voltage
VOS
1.125
1.2
1.375
V
See Figure 2
VOS Magnitude Change
VOS
–
–
50
mV
See Figure 2
Rise/Fall Time
Tr, Tf
–
495
600
ps
20% to 80%, see Figure 2
OE Enable/Disable Time
T_oe
–
–
115
ns
f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period
RMS Period Jitter
T_jitt
–
1.2
1.7
ps
f = 100 MHz, VDD = 3.3V or 2.5V
–
1.2
1.7
ps
f = 156.25 MHz, VDD = 3.3V or 2.5V
–
1.2
1.7
ps
f = 212.5 MHz, VDD = 3.3V or 2.5V
RMS Phase Jitter (random)
T_phj
–
0.6
0.85
ps
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdds
Pin Description
Pin
Map
Functionality
1
VC/OE/ST
V Control
Voltage control
Output Enable
H or Open: specified frequency output
L: output is high impedance
Standby
H or Open: specified frequency output
L: Device goes to sleep mode. Supply current reduces to I_std.
2
NC
NA
No Connect; Leave it floating or connect to GND for better heat dissipation
3
GND
Power
VDD Power Supply Ground
4
OUT+
Output
Oscillator output
5
OUT-
Output
Complementary oscillator output
6
VDD
Power
Power supply voltage
Absolute Maximum
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of
the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Min.
Max.
Unit
Storage Temperature
-65
150
°C
VDD
-0.5
4
V
Electrostatic Discharge (HBM)
–2000
V
Soldering Temperature (follow standard Pb free soldering guidelines)
–
260
°C
Thermal Consideration
Package
JA, 4 Layer Board
(°C/W)
JC, Bottom
(°C/W)
7050, 6-pin
142
27
5032, 6-pin
97
20
3225, 6-pin
109
20
Environmental Compliance
Parameter
Condition/Test Method
Mechanical Shock
MIL-STD-883F, Method 2002
Mechanical Vibration
MIL-STD-883F, Method 2007
Temperature Cycle
JESD22, Method A104
Solderability
MIL-STD-883F, Method 2003
Moisture Sensitivity Level
MSL1 @ 260°C
4
3
1
6
GND
VDD
OUT+
5
2
NC
OUT-
VC/OE/ST
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