LPM9007 datasheet(2/7 Pages) POWER

2 / 7 page

LPM9007-01

May.-2013

Email: marketing@lowpowersemi.com

www.lowpowersemi.com

Page 2 of 7

Preliminary Datasheet

LPM9007

Absolute Maximum Ratings

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

VDS

-30

Gate-Source Voltage

VGS

±12

Continuous Drain

Current A

TA=25°C

-4.2

TA=70°C

-3.5

Pulsed Drain Current B

IDM

-30

Power Dissipation A

TA=25°C

1.4

Junction and Storage Temperature Range

TJ, TSTG

-55 to 150

°C

Thermal resistance ratings

Parameter

Symbol

Typ.

Max.

Units

Maximum Junction-to-Ambient

RθJA

125

°C/W

Electrical Characteristics

Symbol

Parameter

Condition

Min

Typ.

Max

Units

STATIC PARAMETERS

BVDSS

Drain-Source Breakdown Voltage

ID=-250μA, VGS=0V

-30

IDSS

Zero Gate Voltage Drain Current

VDS=-24V, VGS=0V

TJ=55°C

-1

-5

IGSS

Gate-Body leakage current

VDS=0V, VGS=±12V

±100

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250μA

-0.7

-1

-1.3

ID(ON)

On state drain current

VGS=-4.5V, VDS=-5V

-25

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-4.2A

(TJ=125°C)

mΩ

VGS=-4.5V, ID=-4A

mΩ

VGS=-2.5V, ID=-1A

120

mΩ

gFS

Forward Transconductance

VDS=-5V, ID=-5A

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

-0.75

-1

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