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IPT012N06N Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # IPT012N06N
Description  OptiMOSTM Power-Transistor, 60 V
PDF  11 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPT012N06N Datasheet(HTML) 4 Page - Infineon Technologies AG

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4
OptiMOSTMPower-Transistor,60V
IPT012N06N
Rev.2.0,2016-12-09
Final Data Sheet
3Electricalcharacteristics
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
60
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
2.1
2.8
3.3
V
VDS=VGS,ID=143µA
Zero gate voltage drain current
IDSS
-
-
0.5
10
1
100
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
1.0
1.4
1.2
2.0
m
Ω
VGS=10V,ID=100A
VGS=6V,ID=50A
Gate resistance
1)
RG
-
1.6
2.4
Ω
-
Transconductance
gfs
120
240
-
S
|VDS|>2|ID|RDS(on)max,ID=100A
Table5Dynamiccharacteristics1)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
Ciss
-
7800
9750
pF
VGS=0V,VDS=30V,f=1MHz
Output capacitance
Coss
-
1800
2250
pF
VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance
Crss
-
69
138
pF
VGS=0V,VDS=30V,f=1MHz
Turn-on delay time
td(on)
-
16
-
ns
VDD=30V,VGS=10V,ID=100A,
RG,ext=1.8
Ω
Rise time
tr
-
27
-
ns
VDD=30V,VGS=10V,ID=100A,
RG,ext=1.8
Ω
Turn-off delay time
td(off)
-
48
-
ns
VDD=30V,VGS=10V,ID=100A,
RG,ext=1.8
Ω
Fall time
tf
-
23
-
ns
VDD=30V,VGS=10V,ID=100A,
RG,ext=1.8
Ω
Table6Gatechargecharacteristics2)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
35
-
nC
VDD=30V,ID=100A,VGS=0to10V
Gate charge at threshold
Qg(th)
-
22
-
nC
VDD=30V,ID=100A,VGS=0to10V
Gate to drain charge
1)
Qgd
-
19
25
nC
VDD=30V,ID=100A,VGS=0to10V
Switching charge
Qsw
-
32
-
nC
VDD=30V,ID=100A,VGS=0to10V
Gate charge total
1)
Qg
-
106
124
nC
VDD=30V,ID=100A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.5
-
V
VDD=30V,ID=100A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
94
-
nC
VDS=0.1V,VGS=0to10V
Output charge
1)
Qoss
-
119
149
nC
VDD=30V,VGS=0V
1) Defined by design. Not subject to production test
2) See
″Gate charge waveforms″ for parameter definition



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