ST2317DFX datasheet(2/5 Pages) STMICROELECTRONICS

2 / 5 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.8

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 1700 V

Tj = 125

0.5

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 4 V

205

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 800 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 6 A

IB = 1.2 A

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 6 A

IB = 1.2 A

0.9

1.2

hFE

∗

DC Current Gain

IC = 1 A

VCE = 5 V

IC = 6 A

VCE = 1.5 V

IC = 6 A

VCE = 5 V

CCOB

Collector-Output

Capacitance

IE = 0

VCB = 10 V

f = 1 MHz

180

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 6 A

f = 16 KHz

VCC = 135 V

L = 480

µH

V(flyback) = 1050 V

Csn = 25 nF

LBB(off) = 2.3

µH

VBB(off) = -2.7 V

δ = 60%

2.5

0.3

4.5

0.7

µs

Transition Frequency

VCE = 10 V

IC = 0.1 A

f = 1 MHz

MHz

Diode Forward Voltage

IF = 8 A

1.6

2.0

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

ST2317DFX

2/5

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