General Description

The

gate charge. This super junction MOSFET fits the industry’s

AC-DC

SMPS requirements for

PFC,

AC/DC power

conversion, and industrial power applications.

Features

New technology for high voltage device

Low on-resistance and low conduction losses

Small package

Ultra Low Gate Charge cause lower driving requirements

100% Avalanche Tested

ROHS compliant

Application

Power factor correction

PFC

Switched mode power supplies(SMPS)

Uninterruptible Power Supply

UPS

710

V

2.2

Ω

2

A

Package Marking And Ordering Information

Device

Device Package

Marking

TO-251

TO-252

Table 1.

)

Parameter

Symbol

Value

Unit

Drain-Source Voltage (

650

V

Gate-Source Voltage (

30

V

Continuous Drain Current

at Tc=25°C

2

A

Continuous Drain Current

at Tc=100°C

1.3

A

Pulsed drain current

(Note 1)

6

A

Derate above 25

°C

23

0.184

W

W/

°C

Single pulse avalanche energy

(Note2)

45

mJ

Avalanche current

(Note 1)

1

A

Repetitive Avalanche energy

(Note 1)

0.06

mJ

Schematic diagram

TO-251

TO-252

RM2N650IP

2N650

2N650

RM2N650LD

RM2N650IP

RM2N650LD

2016-09

REV:O15