SFH-7250 datasheet(3/16 Pages) OSRAM

3 / 16 page

Version 1.3

SFH 7250

2015-12-14

Dimensions of active chip area

(typ)

L x W

0.2 x 0.2

mm x

Rise and fall time of I

e ( 10% and 90% of Ie max)

F = 70 mA, RL = 50 Ω)

(typ)

r, tf

Forward voltage

(IF = 70 mA, tp = 20 ms)

(typ (max)) V

1.6 (≤ 2)

Forward voltage

(IF = 500 mA, tp = 100 µs)

(typ (max)) VF

2.4 (≤ 3)

Reverse current

R = 5 V)

(typ (max)) IR

not designed for

reverse operation

µA

Total radiant flux

F = 70 mA, tp = 20 ms)

(typ)

Min Radiant Intensity

(IF = 70 mA, tp = 20 ms)

e, min

6.3

mW / sr

Radiant intensity

(IF = 70 mA, tp = 20 ms)

Ie, typ

mW/sr

Typ Radiant Intensity

F = 500 mA, tp = 100 µs)

Ie, typ

mW / sr

Temperature coefficient of I

e or Φe

F = 70 mA, tp = 20 ms)

(typ)

-0.5

% / K

Temperature coefficient of V

(IF = 70 mA, tp = 20 ms)

(typ)

-0.7

mV / K

Temperature coefficient of wavelength

(IF = 70 mA, tp = 20 ms)

(typ)

TCλ

0.3

nm / K

Phototransistor

A = 25 °C, λ = 880 nm)

Wavelength of max. sensitivity

(typ)

S max

990

Spectral range of sensitivity

(S = 10% of Smax)

(typ)

440 ... 1150

Radiant sensitive area

(∅ = 240 µm)

(typ)

0.038

Dimensions of chip area

(typ)

L x W

(typ) 0.45 x

0.45

mm x

Distance chip front to case surface

(typ)

(typ) 0.5 ...

0.7

Half angle

(typ)

± 60

Capacitance

(VCE = 0 V, f = 1 MHz, E = 0)

(typ)

CCE

Parameter

Symbol

Values

Unit

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