IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFP34N60X2A

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

34

A

I

SM

Repetitive, pulse Width Limited by T

JM

136

A

V

SD

I

1.4

V

t

rr

164

ns

Q

RM

1.2

μC

I

RM

14.4

A

I

V

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

12

20

S

R

Gi

Gate Input Resistance

0.8



C

iss

3230

pF

C

oss

V

2000

pF

C

rss

2

pF

C

o(er)

130

pF

C

o(tr)

486

pF

t

d(on)

37

ns

t

r

60

ns

t

d(off)

64

ns

t

f

30

ns

Q

g(on)

56

nC

Q

gs

V

19

nC

Q

gd

18

nC

R

thJC

0.23

C/W

R

thCS

0.50

C/W

Resistive Switching Times

V

R

Effective Output Capacitance

Energy related

Time related

V

V

Pins: 1 - Gate

2 - Drain

3 - Source

TO-220 Outline