| Electronic Components Datasheet Search |
|
LTM4630 Datasheet(PDF) 20 Page - Linear Technology |
|
|
|||||||||||||||||||||||||||||
LTM4630 Datasheet(HTML) 20 Page - Linear Technology |
|
20 / 36 page ![]() LTM4650-1 20 46501fc For more information www.linear.com/LTM4650-1 applicaTions inForMaTion and by definition must always be less than ID. Combining all of the constants into one term: KD = η•k q where KD = 8.62 • 10−5, and knowing ln(ID/IS) is always positive because ID is always greater than IS, leaves us with the equation that: VD =T KELVIN ( )•KD •In ID IS where VD appears to increase with temperature. It is com- mon knowledge that a silicon diode biased with a current sourcehasanapproximate–2mV/°Ctemperaturerelation- ship (Figure 10), which is at odds with the equation. In fact, the IS term increases with temperature, reducing the ln(ID/IS) absolute value yielding an approximate –2mV/°C composite diode voltage slope. its impedance is equal to the resistor at the ring frequency. Calculatedby:ZC=1/(2πfC).Thesevaluesareagoodplace to start with. Modification to these components should be made to attenuate the ringing with the least amount of power loss. Temperature Monitoring Measuring the absolute temperature of a diode is pos- sible due to the relationship between current, voltage and temperature described by the classic diode equation: ID =IS •e VD η• VT ⎛ ⎝ ⎜ ⎞ ⎠ ⎟ or VD =η• VT •In ID IS where ID is the diode current, VD is the diode voltage, η is the ideality factor (typically close to 1.0) and IS (satura- tion current) is a process dependent parameter. VT can be broken out to: VT = k • T q where T is the diode junction temperature in Kelvin, q is the electron charge and k is Boltzmann’s constant. VT is approximately 26mV at room temperature (298K) and scales linearly with Kelvin temperature. It is this linear temperature relationship that makes diodes suitable tem- perature sensors. The IS term in the previous equation is the extrapolated current through a diode junction when the diode has zero volts across the terminals. The IS term varies from process to process, varies with temperature, Figure 10. Diode Voltage VD vs Temperature T(°C) TEMPERATURE (°C) –50 –25 0.3 0.5 0.8 0 50 75 0.4 0.7 0.6 25 100 46501 F10 125 |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |