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LX7203 Datasheet(PDF) 2 Page - Microsemi Corporation |
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LX7203 Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 7 page ![]() LX7203-xx PRODUCTION DATA SHEET Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 EMI Filter & ESD Protection for Up Stream USB Ports Copyright 2002 Rev. 1.0a, 2002-10-22 I N T E GR A T ED PRO DUC T S ABSOLUTE MAXIMUM RATINGS Steady State Power ................................................................100mW ESD Air Discharge per IEC61000-4-2.......................................16kV ESD Contact Discharge per IEC61000-4-2................................10kV Lead Soldering Temperature (10 Seconds) ............................. 260°C Operating Temperature ........................................... -40°C to +125°C Storage Temperature Range .................................... -55°C to +150°C Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal . TH ERMAL DATA SM Plastic 6-Pin SC70 THERMAL RESISTANCE -JUNCTION TO CASE, θ JC 119 °C/W THERMAL RESISTANCE -JUNCTION TO AMBIENT, θ JA 122 °C/W Junction Temperature Calculation: TJ = TA + (PD x θJA). The θJA numbers are guidelines for the thermal performance of the device/pc-board system. All of the above assume no ambient airflow. PACKAGE PIN OUT V BUS D IN D IN D OUT D OUT GND 1 2 3 4 5 6 from connector from connector to IC to IC SM PACKAGE (Top View) FUNCTIONAL PIN DESCRIPTION Name Description VBUS Bus Voltage DIN Data In GND Ground DOUT Data Out ELECTRICAL CHA RACTERISTICS Unless otherwise specified, the following specifications apply over the operating ambient temperature -40 °C ≤ T A ≤ +125°C except where otherwise noted. LX7203 Parameter Symbol Test Conditions Min Typ Max Units Stand-Off Voltage VRWM 5.25 V Breakdown Voltage VBR IR = 1mA 6 V Leakage Current IR VRWM = 5.25V, T = 25°C 1 µA Series Resistance (-15) RS Each Line 13.5 15 16.5 Ω Series Resistance (-22) RS Each Line 19.8 22 24.2 Ω Temperature Coefficient of RS TCOEFF Each Line 200 ppm Pull Up Resistance RPU Each Line 1.35 1.5 1.65 K Ω Capacitor CEDGE Each Line 47 pF Total Capacitance CTOT Between I/O Pins and Ground, Each Device VR = 0V, f = 1MHz 54 60 66 pF |
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