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IRGS4630DPbF Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # IRGS4630DPbF
Description  Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
PDF  17 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IRGS4630DPbF Datasheet(HTML) 7 Page - Infineon Technologies AG

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IRGB/IB/P/S4630D/EPbF
7
2015-11-23
0
500
1000
1500
diF /dt (A/µs)
400
600
800
1000
1200
1400
1600
10
Ω
22
Ω
100
Ω
47
Ω
18A
36A
9.0A
8
10
12
141618
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
20
30
40
50
60
70
80
90
100
110
120
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
0
10
20
30
40
IF (A)
0
50
100
150
200
250
300
350
400
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
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100
VCE (V)
10
100
1000
10000
Cies
Coes
Cres
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 175°C
0
500
1000
1500
diF /dt (A/µs)
0
5
10
15
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30
35
40
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 18A; TJ = 175°C
0
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30
35
Q G, Total Gate Charge (nC)
0
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VCES = 300V
VCES = 400V
Fig. 23 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
Fig. 24 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 25 - Typical Gate Charge vs. VGE
ICE = 18A; L = 600µH



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