STB75NH02L datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

STB75NH02L

2/8

ABSOLUTE MAXIMUM RATINGS

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

ON/OFF

Symbol

Parameter

Value

Unit

Vspike(1)

Drain-source Voltage Rating

VDS

Drain-source Voltage (VGS =0)

VDGR

Drain-gate Voltage (RGS =20kΩ)

VGS

Gate- source Voltage

± 20

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

IDM (5)

Drain Current (pulsed)

300

PTOT

Total Dissipation at TC = 25°C

Derating Factor

W/°C

EAS (2)

Single Pulse Avalanche Energy

TBD

Tstg

Storage Temperature

-55 to 175

°C

Max. Operating Junction Temperature

Rthj-case

Thermal Resistance Junction-case Max

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Maximum Lead Temperature for Soldering Purpose

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 25 mA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = 20V

1µA

VDS = 20V, TC =125 °C

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 20V

±100

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250µA

RDS(on)

Static Drain-source On

Resistance

VGS =10V,ID =30 A

VGS =5 V, ID =30A

0.0062

0.008

0.014

Ω

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