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TMS44409 Datasheet(PDF) 13 Page - Texas Instruments |
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TMS44409 Datasheet(HTML) 13 Page - Texas Instruments |
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13 / 26 page ![]() TMS44409, TMS44409P 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS563 – JULY1995 13 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 PARAMETER MEASUREMENT INFORMATION RAS CAS A0 – A9 W OE DQ1 – DQ4 tRWC Row Column Don’t Care Don’t Care Don’t Care Data Out Don’t Care Don’t Care Data In tRAS tRCD tT tCAS tRP tCRP tCP tT tCAH tASC tRAH tASR tRAD tRCS tRWD tRWL tWP tAWD tCWD tCAC tDS tDH tAA tCLZ tRAC tOEA tOEZ tOED tOEH See Note A tCWL Hi-Z NOTE A: Output can go from the high-impedance state to an invalid-data state prior to the specified access time. Figure 5. Read-Write-Cycle Timing |
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