VUB116 datasheet(2/2 Pages) IXYS

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Advanced Technical Information

VUB 116 / 145

R = VRRM, TVJ =

25°C

0.1

R = VRRM, TVJ = 150°C

F =

80 A, T

VJ = 25°C

VUB 116

1.43

F = 150 A, TVJ = 25°C

VUB 145

1.68

for power-loss calculations only

VUB 116

0.85

VUB 145

0.85

VJ = 150°C

VUB 116

7.1

Ω

VUB 145

5.9

Ω

thJC

per diode

VUB 116

0.65 K/W

VUB 145

0.5 K/W

thCH

VUB 116

0.1 K/W

VUB 145

0.1 K/W

BR(CES)

GS = 0 V, IC = 0.1 mA

1200

GE(th)

C = 8 mA

VUB 116

4.5

6.45

C = 3 mA

VUB 145

4.5

6.45

CES

VJ =

25°C, V

CE = 1200 V

0.1

VJ = 125°C, VCE = 0,8 • VCES

0.5

CEsat

GE = 15 V, IC = 100 A

VUB 116

3.5

GE = 15 V, IC = 150 A

VUB 145

3.7

SC (SCSOA)

GE = 15 V, VCE = 720 V, TVJ = 125°C,

µs

RBSOA

GE = 15 V, VCE = 1200 V, TVJ = 125°C,

clamped inductive load, L = 100 µH

G = 22 Ω

VUB 116

100

G = 15 Ω

VUB 145

150

ies

CE = 25 V, f = 1 MHz, VGE = 0 V VUB 116

3.8

VUB 145

5.7

d(on)

150

d(off)

680

VUB 116

VUB 145

off

VUB 116

VUB 145

7.5

thJC

VUB 116

0.33 K/W

VUB 145

0.22 K/W

thJH

VUB 116

0.66 K/W

VUB 145

0.44 K/W

R = VRRM,

VJ =

25°C

0.25

R = 1200 V,

VJ = 125°C

F = 30 A,

VJ =

25°C

2.76

For power-loss calculations only

1.3

VJ = 150°C

Ω

F = 50 A, -diF/dt = 100 A/µs, VR = 100 V

5.5

F =

1 A, -di

F/dt = 200 A/µs, VR = 30 V

thJC

0.9 K/W

thCH

0.1 K/W

4.75

5.0 5.25

Ω

25/50

3375

Symbol

Conditions

Characteristic Values

VJ = 25°C, unless otherwise specified)

min.

typ.

max.

CE = 720 V, IC = 50/75 A

GE = 15 V, RG = 32/15 Ω

Inductive load; L = 100 µH

VJ = 125°C

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