DF150R12RT4_13 datasheet(4/10 Pages) INFINEON

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TechnischeInformation/TechnicalInformation

DF150R12RT4

IGBT-Module

IGBT-modules

preparedby:MK

approvedby:WR

dateofpublication:2013-11-05

revision:2.2

VorläufigeDaten

PreliminaryData

Diode,Revers/Diode,Reverse

HöchstzulässigeWerte/MaximumRatedValues

PeriodischeSpitzensperrspannung

Repetitivepeakreversevoltage

Tvj = 25°C

VRRM

1200

Dauergleichstrom

ContinuousDCforwardcurrent

PeriodischerSpitzenstrom

Repetitivepeakforwardcurrent

tP = 1 ms

IFRM

100

Grenzlastintegral

I²t-value

VR = 0 V, tP = 10 ms, Tvj = 125°C

VR = 0 V, tP = 10 ms, Tvj = 150°C

I²t

600

550

A²s

CharakteristischeWerte/CharacteristicValues

min.

typ.

max.

Durchlassspannung

Forwardvoltage

IF = 50 A, VGE = 0 V

1,75

1,65

2,20

Tvj = 25°C

Tvj = 125°C

Tvj = 150°C

Rückstromspitze

Peakreverserecoverycurrent

IF = 50 A, - diF/dt = 1300 A/µs (Tvj=150°C)

VR = 600 V

IRM

55,0

60,0

65,0

Tvj = 25°C

Tvj = 125°C

Tvj = 150°C

Sperrverzögerungsladung

Recoveredcharge

IF = 50 A, - diF/dt = 1300 A/µs (Tvj=150°C)

VR = 600 V

5,00

9,00

10,0

µC

Tvj = 25°C

Tvj = 125°C

Tvj = 150°C

AbschaltenergieproPuls

Reverserecoveryenergy

IF = 50 A, - diF/dt = 1300 A/µs (Tvj=150°C)

VR = 600 V

Erec

2,00

3,20

3,60

Tvj = 25°C

Tvj = 125°C

Tvj = 150°C

Wärmewiderstand,ChipbisGehäuse

Thermalresistance,junctiontocase

proDiode/perdiode

RthJC

0,84

K/W

Wärmewiderstand,GehäusebisKühlkörper

Thermalresistance,casetoheatsink

proDiode/perdiode

λPaste=1W/(m·K)/λgrease=1W/(m·K)

RthCH

0,405

K/W

TemperaturimSchaltbetrieb

Temperatureunderswitchingconditions

Tvj op

-40

150

°C

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