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BCR3 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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BCR3 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 2 page ![]() Feb.1999 V2. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5 °C/W. IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Tj=125 °C, VDRM applied Tc=25 °C, ITM=4.5A, Instantaneous measurement Tj=25 °C, VD=6V, RL=6Ω, RG=330Ω Tj=25 °C, VD=6V, RL=6Ω, RG=330Ω Tj=125 °C, VD=1/2VDRM Junction to case V3 Unit Repetitive peak off-state current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Limits Max. 2.0 1.6 1.5 1.5 1.5 30 30 30 — 4.0 — ! @ # ! @ # Typ. — — — — — — — — — — — Min. — — — — — — — — 0.2 — V2 mA V V V V mA mA mA V °C/W V/ µs Symbol Parameter Test conditions ELECTRICAL CHARACTERISTICS MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM-14 LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Voltage class VDRM (V) 14 700 Symbol (dv/dt)c Test conditions Commutating voltage and current waveforms (inductive load) Unit SUPPLY VOLTAGE TIME TIME TIME MAIN CURRENT MAIN VOLTAGE (di/dt)c VD (dv/dt)c L R V/ µs 5 — Min. 1. Junction temperature Tj=125 °C 2. Rate of decay of on-state commutating current (di/dt)c=–1.5A/ms 3. Peak off-state voltage VD=400V PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT CONDUCTION TIME (CYCLES AT 60Hz) 3.8 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 TC = 25°C 100 23 5 7 101 23 5 7 102 44 30 35 20 25 10 15 5 40 0 |
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