STT818A datasheet(2/6 Pages) STMICROELECTRONICS

Part #	STT818A

Description	HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 6 page

THERMAL DATA

Rthj-amb

(1)

Thermal Resistance Junction-ambient

Max

105

oC/W

(1) Package mounted on FR4 pcb 25mm x 25mm.

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

VCB =-30 V

TC = 125

-0.1

-20

µA

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =-5 V

-0.1

µA

V( BR)CEO

∗ Collector-Emitter

Breakdown Volt age

(IB =0)

IC =-10 mA

-30

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =-0.7 A

IB =-20 mA

IC =-1.2 A

IB =-20 mA

IC =-2 A

IB =-20 mA

-0.07

-0.12

-0.25

-0.12

-0.25

-0.5

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =-0.7 A

IB =-20 mA

-1.1

VBE(ON)

∗ Base-Emitter Voltage

IC =-2 A

VCE =-2 V

-1.1

hFE

∗

DC Current G ain

IC =-0.5 A

VCE =-1 V

IC =-2.5 A

VCE =-3 V

100

300

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Safe Operating Area

DC Current Gain

STT818A

2/6

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