Features

• High Surge Capability

DO-5 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

Unit

Repetitive peak reverse voltage

V

S85V thru S85YR

Silicon Standard

Recovery Diode

Conditions

2. Reverse polarity (R): Stud is anode.

S85V (R)

1400

1600

S85Y (R)

pp

g

RMS reverse voltage

V

DC blocking voltage

V

Continuous forward current

A

Operating temperature

°C

Storage temperature

°C

Parameter

Symbol

Unit

Diode forward voltage

μA

mA

Thermal characteristics

Thermal resistance, junction -

case

°C/W

V

10

4.5

10

4.5

0.65

0.65

Conditions

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Surge non-repetitive forward

current, Half Sine Wave

-55 to 150

Reverse current

A

990

1400

85

1800

1130

1600

85

1800

-55 to 150

S85V (R)

S85Y (R)

1.1

1.1

-55 to 150

-55 to 150

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

1