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TLP4197G Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLP4197G Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() TLP4197G 2002-04-18 2 Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta >= 25°C) DIF/°C -0.5 mA/°C Peak forward current (100 ms pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Off-state output terminal voltage VOFF 350 V A connection 120 B connection 120 On-state current C connection ION 240 mA A connection -1.2 B connection -1.2 On-state current derating (Ta >= 25°C) C connection DION/°C -2.4 mA/°C Junction temperature Tj 125 °C Operating temperature range Topr -40 to 85 °C Storage temperature range Tstg -55 to 125 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 1 min, R.H. <= 60%) (Note 1) BVS 1500 Vrms Note 1: Device considered a two-terminal device: LED side pins shorted together, and DETECTOR side pins and 6 shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VDD ¾ ¾ 280 V Forward current IF 5 ¾ 25 mA On-state current ION ¾ ¾ 120 mA Operating temperature Topr -20 ¾ 65 °C Circuit Connections A Connection B Connection C Connection 1 2 3 6 5 4 LOAD AC or DC 1 2 3 6 5 4 LOAD DC 1 2 3 6 5 4 LOAD DC |
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