AF2302N

20V N-Channel Enhancement Mode MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.1 Jul 20, 2004

2/4

Symbol

Parameter

Rating

Units

Drain-Source Voltage

20

V

Gate-Source Voltage

±8

V

Continuous Drain Current

2.4

A

Pulsed Drain Current

10

A

1.25

Maximum Power Dissipation

0.8

W

Operating Junction Temperature

+150

ºC

Operating Junction and Storage Temperature Range

-55 to +150

ºC

Thermal Performance

Symbol

Parameter

Limit

Units

Lead Temperature (1/8” from case)

5

S

Junction to Ambient Thermal Resistance (PCB mounted)

100

ºC/W

Note: Surface mounted on FR4 board t < 5 sec.

Limits

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

20

-

-

V

-

50

65

Drain-Source On-State Resistance

-

75

95

mΩ

Gate Threshold Voltage

0.45

-

-

V

Zero Gate Voltage Drain Current

-

-

1.0

uA

Gate Body Leakage

-

-

±100

nA

On-State Drain Current

6

-

-

A

Forward Tranconductance

-

10

-

S

Dynamic

Total Gate Charge

-

5.2

10

Gate-Source Charge

-

0.65

-

Gate-Drain Charge

-

1.5

-

nC

Turn-On Delay Time

-

7

15

Turn-On Rise Time

-

55

80

Turn-Off Delay Time

-

16

60

Turn-Off Fall-Time

-

10

25

nS

Input Capacitance

-

450

-

Output Capacitance

-

70

-

Reverse Transfer Capacitance

f=1.0MHz

-

43

-

pF

Source-Drain Diode

Max. Diode Forward Current

-

-

1.6

A

Diode Forward Voltage

-

0.75

1.2

V

Note: Pulse test: pulse width < 300uS, duty cycle < 2%