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NTE593 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE593 Datasheet(HTML) 1 Page - NTE Electronics |
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1 / 2 page  NTE593 Silicon Diode, High Speed Switch Description: The NTE593 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This device is intended for high–speed switching in hybrid thick–film circuits. Absolute Maximum Ratings: Continuous Reverse Voltage, VR 75V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Repetitive Peak Reverse Voltage, VRRM 85V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Non–Repetitive Peak Forward Current (t = 1s), IFSM 500mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) 250mA . . . . . . DC Forward Current (TA ≤ +25°C, Note 2), IF 250mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Repetitive Peak Forward Current, IFRM 250mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Power Dissipation (TA ≤ +25°C), Ptot 200mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature, TJ +150 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –65 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction–to–Ambient (Note 2), RthJA 430K/W . . . . . . . . . . . . . . . . . . . . . . . . . . . Note 1. Measured under pulse conditions: tp ≤ 0.5ms, IF(AV) = 150mA, t(av) ≤ 1ms, for sinusoidal operation. Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Forward Voltage VF IF = 1mA – – 715 mV IF = 10mA – – 855 mV IF = 50mA – – 1000 mV IF = 150mA – – 1250 mV Reverse Current IR VR = 75V – – 1 µA VR = 75V, TJ = +150°C – – 50 µA Diode Capacitance Cd VR = 0, f = 1MHz – – 2 pF Reverse Recovery Time (When switched from IF = 30mA to IR = 30mA trr measured at IR = 1mA, RL = 100Ω – – 6 ns Recovery Charge (When switched from IF = 10mA to VR = 5V Qs RL = 100Ω – – 45 pC |
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