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MS2207 Datasheet(PDF) 1 Page - Advanced Power Technology |
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MS2207 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 3 page ![]() 053-7113 Rev - 11-2002 MS2207 DESCRIPTION: DESCRIPTION: DESCRIPTION: DESCRIPTION: The MS2207 is a high power NPN bipolar transistor specifically designed for TCAS and Mode-S driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 15:1 output VSWR at rated conditions. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°°°C) Symbol Parameter Value Unit PDISS Power Dissipation 880 W IC Device Current 24 A VCC Collector Supply Voltage 55 V TJ Junction Temperature 200 °°°°C TSTG Storage Temperature -65 to +200 °°°°C Thermal Data Thermal Data Thermal Data Thermal Data RTH(J-C) Junction-case Thermal Resistance 0.17 °°°°C/W Features Features Features Features • 1090 MHz • 50 VOLTS • 15:1 VSWR CAPABILITY • INPUT / OUTPUT MATCHING • POUT = 400 WATTS • GP = 8.0 dB MINIMUM • COMMON BASE CONFIGURATION RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS |
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