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SDP55N02 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp. |
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SDP55N02 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp. |
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2 / 6 page ![]() E LE CTR ICAL CHAR ACTE R IS TICS (TC 25 C unless otherwise noted) = Parameter Symbol Condition Min Typ Max Unit OFF CHAR ACTER ISTICS Drain-Source Breakdown Voltage BVDSS = VGS 0V, ID 250uA = 20 V Zero Gate Voltage Drain Current IDSS VDS 16V, VGS 0V = = 10 uA Gate-Body Leakage IGSS VGS 8V, VDS 0V = = 100 nA ON CHAR ACTER ISTICS a Gate Threshold Voltage VGS(th) VDS VGS, ID = 250uA = 1 V Drain-Source On-State R esistance R DS(ON) VGS = 4.5V, ID = 21A 19 On-State Drain Current ID(ON) VDS = 10V, VGS = 10V 40 53 A S Forward Transconductance FS g VDS = 10V, ID = 26A DYNAMIC CHAR ACTER ISTICS b Input Capacitance CISS CRSS COSS Output Capacitance R everse Transfer Capacitance VDS =15V, VGS = 0V f =1.0MHZ 1100 P F 600 P F P F 180 SWITCHING CHAR ACTER ISTICS b Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD = 10V, ID = 1A, VGS = 10V R GEN = 6 50 ns ns ns ns 200 89 Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS =10V, ID = 30A, VGS =4.5V nC nC nC C Fall Time 4 18.2 5.3 2.2 2 14 S DP /B 55N02 0.9 1.5 62.5 m ohm ohm |
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