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2SCR502EB Datasheet(PDF) 2 Page - Rohm

Part # 2SCR502EB
Description  NPN 500mA 30V General purpose transistors
PDF  8 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

2SCR502EB Datasheet(HTML) 2 Page - Rohm

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2SCR502EB / 2SCR502UB
     
Datasheet
l
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
6
V
Collector current
IC*1
0.5
A
ICP*2
1
A
Base current
IB
0.15
A
Power dissipation
2SCR502EB
PD*3
150
mW
2SCR502UB
200
Junction temperature
Tj
150
℃
Range of storage temperature
Tstg
-55 to +150
℃
l
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Collector-base breakdown
voltage
BVCBO
IC = 100μA
30
-
-
V
Collector-emitter breakdown
voltage
BVCEO
IC = 1mA
30
-
-
V
Emitter-base breakdown voltage
BVEBO
IE = 100μA
6
-
-
V
Collector cut-off current
ICBO
VCB = 25V
-
-
200
nA
Emitter cut-off current
IEBO
VEB = 4V
-
-
200
nA
Collector-emitter saturation voltage
VCE(sat) IC = 200mA, IB = 10mA
-
100
300
mV
DC current gain
hFE
VCE = 2V, IC = 100mA
200
-
500
-
Transition frequency
fT
*4
VCE = 10V, IE = -100mA,
f = 100MHz
-
360
-
MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
-
3
-
pF
                                        
                              
*1 Limited by power dissipation.
*2 Pw=10ms, Single pulse.
*3 Each terminal mounted on a reference land.
*4 Pulsed
                                            
 
                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/7
20150730 - Rev.002



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