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2SCR502EB Datasheet(PDF) 2 Page - Rohm |
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2SCR502EB Datasheet(HTML) 2 Page - Rohm |
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2 / 8 page ![]() 2SCR502EB / 2SCR502UB Datasheet l lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V Collector current IC*1 0.5 A ICP*2 1 A Base current IB 0.15 A Power dissipation 2SCR502EB PD*3 150 mW 2SCR502UB 200 Junction temperature Tj 150 ℃ Range of storage temperature Tstg -55 to +150 ℃ l lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = 100μA 30 - - V Collector-emitter breakdown voltage BVCEO IC = 1mA 30 - - V Emitter-base breakdown voltage BVEBO IE = 100μA 6 - - V Collector cut-off current ICBO VCB = 25V - - 200 nA Emitter cut-off current IEBO VEB = 4V - - 200 nA Collector-emitter saturation voltage VCE(sat) IC = 200mA, IB = 10mA - 100 300 mV DC current gain hFE VCE = 2V, IC = 100mA 200 - 500 - Transition frequency fT *4 VCE = 10V, IE = -100mA, f = 100MHz - 360 - MHz Output capacitance Cob VCB = 10V, IE = 0A, f = 1MHz - 3 - pF *1 Limited by power dissipation. *2 Pw=10ms, Single pulse. *3 Each terminal mounted on a reference land. *4 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/7 20150730 - Rev.002 |
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