MCC56-08IO1B datasheet(5/6 Pages) IXYS

5 / 6 page

MCC56-08io1B

100

125

150

a [°C]

C [°C]

t [ms]

t [s]

0.01

0.1

200

400

600

800

1000

1200

1400

103

104

105

100 125 150

100

120

TSM

[A]

TAVM

[A]

100

120

tot

[W]

TAVM [A]

100

125

150

120

160

100

200

300

400

500

2dt

2s]

VJ = 45°C

180 ° sin

120 °

60 °

30 °

VJ = 125°C

tot

[W]

dAVM

[A]

a [°C]

Fig. 1 Surge overload current I

TSM,

FSM: Crest value, t: duration

Fig. 2 I

2t versus time (1-10 ms)

Fig. 3 Max. forward current

at case temperature

Fig. 4 Power dissipation vs. on-state current & ambient temperature

(per thyristor or diode)

Fig. 5 Gate trigger characteristics

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct

output current and ambient temperature

Fig. 7 Gate trigger delay time

180 ° sin

120 °

60 °

30 °

0.01

0.1

100

G [A]

G [mA]

VJ = 25°C

[µs]

limit

typ.

VJ = 45°C

VJ = 125°C

TSM = 50 Hz

IFSM = 80% VRRM

thKA K/W

0.5

0.25

0.3

0.4

0.15

0.2

0.1

0.6

100

101

102

103

104

0.1

1: I

, TVJ = 125°C

2: I

GT, TVJ = 25°C

3: I

GT, TVJ = -40°C

[V]

6: P

GM = 10 W

5: P

GM = 5 W

4: P

GAV = 0.5 W

, T4 = 125°C

R = 0 V

thKA K/W

0.8

1.2

1.5

2.5

Circuit

3x MCC56 or

3x MCD56

Thyristor

IXYS reserves the right to change limits, conditions and dimensions.

20161222b

Data according to IEC 60747and per semiconductor unless otherwise specified

MCC56-08IO1B Datasheet(PDF) 5 Page - IXYS Corporation

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