MCC95-08io1B

0

40

80

120

160

0

40

80

120

160

200

0.01

0.10

1.00

10.00

0.1

1.0

10.0

100.0

0.01

0.1

1

800

1200

1600

2000

0.5

1.0

1.5

2.0

0

50

100

150

200

250

300

1

10

100

1000

10000

0.00

0.04

0.08

0.12

0.16

0.20

0.24

I

T

[A]

t [s]

V

2

3

4 5 6 7 8 9 0

1

1

I

[A

t [ms]

I

TSM

[A]

T

T

50 Hz, 80% V

RRM

T

V

I

TAVM

[A]

T

Z

thJC

[K/W]

t

[ms]

Fig. 1 Forward characteristics

Fig. 2 Surge overload current

I

Fig. 3 I

Fig. 4 Gate voltage & gate current

Fig. 6 Max. forward current at

case temperature

Fig. 8 Transient thermal impedance junction to case

t

gd

[μs]

I

lim.

typ.

Fig. 5 Gate controlled delay time t

gd

0

40

80

120 160

0

50

100

150

200

250

I

P

tot

[W]

Fig. 7a Power dissipation versus direct output current

Fig. 7b and ambient temperature

0

40

80

120

160

T

T

dc =

1

0.5

0.4

0.33

0.17

0.08

dc =

1

0.5

0.4

0.33

0.17

0.08

0.01

0.1

1

10

0.1

1

10

100

V

G

[V]

I

t

P

30 µs

P

8 W

I

GD

I

T

T

i

R

t

1

0.0073

0.0001

2

0.0128

0.0031

3

0.1329

0.084

4

0.067

0.42

T

140°C

R

thHA

0.1

0.2

0.4

0.6

0.8

1.0

60 W, t

Thyristor

IXYS reserves the right to change limits, conditions and dimensions.

20161222c

Data according to IEC 60747and per semiconductor unless otherwise specified

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