FT6264 datasheet(3/17 Pages) FORCE

Part #	FT6264

Description	ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS

PDF	17 Pages

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Manufacturer	FORCE [Force Technologies Ltd]

Direct Link	https://www.forcetechnologies.co.uk

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3 / 17 page

DATA RETENTION CHARACTERISTICS (FT6264L, Military Temperature Only)

Typ.*

Max

Symbol

Parameter

Test Condition

Min

CC=VCC=

Unit

2.0V

3.0V

2.0V

3.0V

CC for Data Retention

2.0

CCDR

Data Retention Current

200

300

µA

CDR

Chip Deselect to

Data Retention Time

†

Operation Recovery Time

A = +25°C

§t

RC = Read Cycle Time

†This parameter is guaranteed but not tested.

CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE1 = VIL, CE2 = VIH, OE = VIH

POWER DISSIPATION CHARACTERISTICS VS. SPEED

DATA RETENTION WAVEFORM

1 ≥ VCC – 0.2V or

2 ≤ 0.2V, VIN ≥ VCC – 0.2V

or V

IN ≤ 0.2V

Symbol

Parameter

Temperature

Range

-8

-10

-12

-15

-20

-25

-35

-70 -100

Unit

Commercial

200 180 170 160 155 150 145 N/A 130 125

Industrial

N/A 190 180 170 160 155 150 N/A 145 140

Military

N/A N/A 180 170 160 155 150 145 145 145

Dynamic Operating Current*

ICC

Rev 1.8

3/17

2012

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