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AFT09MS015N Datasheet(PDF) 7 Page - NXP Semiconductors

Part # AFT09MS015N
Description  High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
PDF  18 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFT09MS015N Datasheet(HTML) 7 Page - NXP Semiconductors

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AFT09MS015NT1
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 870 MHz
0
0
12
12
3
4
4.5
10
4
8
6
14
Pin =0.30 W
VDD = 12.5 Vdc, f = 870 MHz
16
18
22
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 6. Output Power versus Gate--Source Voltage
at a Constant Input Power
Pin, INPUT POWER (WATTS)
0
10
6
0.01
40
60
50
10
30
16
14
12
18
70
80
110
0.1
1
20
22
0
Figure 7. Power Gain, Output Power and Drain
Efficiency versus Input Power
20
20
8
2
0.5
3.5
2.5
1.5
Pin =0.15 W
4
2
90
100
Gps
Pout
VDD = 12.5 Vdc, IDQ = 100 mA
f = 870 MHz
D
VDD = 12.5 Vdc, IDQ = 100 mA, Pout =15 W
f
MHz
Zsource
Zload
870
0.80 + j0.80
2.05 + j1.80
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 8. Narrowband Series Equivalent Source and Load Impedance — 870 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource
Zload
50 
50 



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