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AFT09MS015N Datasheet(PDF) 7 Page - NXP Semiconductors |
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AFT09MS015N Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 18 page ![]() AFT09MS015NT1 7 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 870 MHz 0 0 12 12 3 4 4.5 10 4 8 6 14 Pin =0.30 W VDD = 12.5 Vdc, f = 870 MHz 16 18 22 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 6. Output Power versus Gate--Source Voltage at a Constant Input Power Pin, INPUT POWER (WATTS) 0 10 6 0.01 40 60 50 10 30 16 14 12 18 70 80 110 0.1 1 20 22 0 Figure 7. Power Gain, Output Power and Drain Efficiency versus Input Power 20 20 8 2 0.5 3.5 2.5 1.5 Pin =0.15 W 4 2 90 100 Gps Pout VDD = 12.5 Vdc, IDQ = 100 mA f = 870 MHz D VDD = 12.5 Vdc, IDQ = 100 mA, Pout =15 W f MHz Zsource Zload 870 0.80 + j0.80 2.05 + j1.80 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Figure 8. Narrowband Series Equivalent Source and Load Impedance — 870 MHz Input Matching Network Device Under Test Output Matching Network Zsource Zload 50 50 |
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