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AFT09S200W02S Datasheet(PDF) 6 Page - NXP Semiconductors

Part # AFT09S200W02S
Description  N-Channel Enhancement-Mode Lateral MOSFET
PDF  13 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFT09S200W02S Datasheet(HTML) 6 Page - NXP Semiconductors

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6
RF Device Data
Freescale Semiconductor, Inc.
AFT09S200W02SR3
TYPICAL CHARACTERISTICS
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
--15
--25
15
21
0
60
50
40
30
20
20
19
10
100
200
10
--65
18
17
16
--5
--35
--45
--55
ACPR
D
920 MHz 940 MHz
960 MHz
Gps
VDD =28 Vdc,IDQ = 1400 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
920 MHz 940 MHz
960 MHz
960 MHz
940 MHz
920 MHz
Figure 7. Broadband Frequency Response
0
30
f, FREQUENCY (MHz)
20
15
10
25
5
550
700
850
1000
1150
1300
1450
Gain
VDD =28 Vdc
Pin =0 dBm
IDQ = 1400 mA
--50
10
0
--10
--20
--30
--40
IRL



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