U20GL2C48A datasheet(1/2 Pages) TOSHIBA

Part #	U20GL2C48A

Description	TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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U20GL2C48A

2001-07-11

1

* 1

MARK

20GL2C

* 2

A

* 3

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

U20GL2C48A

SWITCHING MODE POWER SUPPLY APPLICATION

CONVERTER & CHOPPER APPLICATION

l Repetitive Peak Reverse Voltage

: VRRM = 400V

l Average Output Rectified Current

: IO = 20A

l Ultra Fast Reverse−Recovery Time : trr = 35ns (Max)

l Low Switching Losses and Output Noise.

MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Repetitive Peak Reverse Voltage

VRRM

400

V

Average Output Rectified Current

IO

20

A

100 (50Hz)

Peak One Cycle Surge Forward

Current (Sin Wave)

IFSM

110 (60Hz)

A

Junction Temperature

Tj

−40~150

°C

Storage Temperature Range

Tstg

−40~150

°C

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN

TYP.

MAX

UNIT

Peak Forward Voltage

VFM

IFM = 10A

―

1.8

V

Repetitive Peak Reverse Current

IRRM

VRRM = 400V

―

50

µA

Reverse Recovery Time

trr

IF = 2A, di / dt = −50A / µs

―

35

ns

Forward Recovery Time

tfr

IF = 1A

―

100

ns

Thermal Resistance

Rth (j−c)

DC Total, Junction to Case

―

1.6

°C / W

Note: VFM, IRRM, trr, tfr ········ A value of one cell.

POLARITY

MARKING

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

12−10D2A

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