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MMRF2005N Datasheet(PDF) 6 Page - NXP Semiconductors

Part # MMRF2005N
Description  RF LDMOS Wideband Integrated Power Amplifiers
PDF  18 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMRF2005N Datasheet(HTML) 6 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
MMRF2005N MMRF2005GN
TYPICAL CHARACTERISTICS — 900 MHz
Figure 7. Broadband Frequency Response
10
40
450
f, FREQUENCY (MHz)
VDD =28 Vdc
Pin = –10 dBm
IDQ1 = 106 mA
IDQ2 = 285 mA
30
25
20
550
35
Gain
650
750
850
950
1050
1150
1250
IRL
–30
0
–5
–10
–15
–20
15
–25
Table 8. Series Equivalent Input and Load
Impedance — 900 MHz
f
MHz
Zin
Zload
820
37.95 + j2.31
4.70 + j0.98
840
39.95 + j2.72
4.29 + j1.23
860
42.70 + j1.02
3.93 + j1.67
880
44.40 – j1.38
3.63 + j2.15
900
46.25 – j4.92
3.41 + j2.61
920
45.70 – j8.41
3.14 + j3.05
940
45.46 – j11.47
2.94 + j3.48
960
45.07 – j15.19
2.85 + j3.90
980
43.49 – j18.03
2.69 + j4.32
Zin
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Z in
Z load
Device
Under Test
Output
Matching
Network



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