BAV99

www.vishay.com

Vishay Semiconductors

Rev. 2.1, 13-Feb-18

1

Document Number: 85718

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Small Signal Switching Diode, Dual in Series

DESIGN SUPPORT TOOLS click logo to get started

MECHANICAL DATA

Case: SOT-23

Weight: approx. 8.8 mg

Packaging codes / options:

18/10K per 13

" reel (8 mm tape), 10K/box

08/3K per 7

" reel (8 mm tape), 15K/box

FEATURES

• Fast switching speed

• High conductance

• Surface mount package ideally suited for

automatic insertion

• Connected in series

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: for definitions of compliance

18109

12

3

Available

Models

PARTS TABLE

PART

ORDERING CODE

CIRCUIT CONFIGURATION

TYPE MARKING

REMARKS

BAV99

BAV99-E3-08 or BAV99-E3-18

Dual serial

JE

Tape and reel

BAV99-HE3-08 or BAV99-HE3-18

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Non repetitive peak reverse voltage

100

V

Repetitive peak reverse voltage



= working peak reverse voltage



= DC blocking voltage

70

Peak forward surge current

1

A

4.5

Average forward current

Half wave rectification with resistive load

and f

 50 MHz, on ceramic substrate

10 mm x 8 mm x 0.7 mm

150

mA

Forward current

On ceramic substrate

10 mm x 8 mm x 0.7 mm

250

Power dissipation

On ceramic substrate

10 mm x 8 mm x 0.7 mm

300

mW

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Junction ambient

On ceramic substrate

10 mm x 8 mm x 0.7 mm

430

K/W

Junction and storage temperature range

-55 to +150

°C

Operating temperature range

-55 to +150

°C