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BS107A Datasheet(PDF) 2 Page - ON Semiconductor

Part # BS107A
Description  Small Signal MOSFET 250 mAmps, 200 Volts
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BS107A Datasheet(HTML) 2 Page - ON Semiconductor

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BS107, BS107A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0)
IDSS
30
nAdc
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc)
V(BR)DSX
200
Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
IGSS
0.01
10
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS)
VGS(Th)
1.0
3.0
Vdc
Static Drain–Source On Resistance
BS107
(VGS = 2.6 Vdc, ID = 20 mAdc)
(VGS = 10 Vdc, ID = 200 mAdc)
BS107A (VGS = 10 Vdc)
(ID = 100 mAdc)
(ID = 250 mAdc)
rDS(on)
4.5
4.8
28
14
6.0
6.4
Ohms
SMALL–SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
60
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
6.0
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
30
pF
Forward Transconductance
(VDS = 25 Vdc, ID = 250 mAdc)
gfs
200
400
mmhos
SWITCHING CHARACTERISTICS
Turn–On Time
ton
6.0
15
ns
Turn–Off Time
toff
12
15
ns
2. Pulse Test: Pulse Width
v 300 µs, Duty Cycle v 2.0%.
Figure 1. Switching Test Circuit
Figure 2. Switching Waveforms
RESISTIVE SWITCHING
20 dB
50 Ω ATTENUATOR
PULSE GENERATOR
+25 V
Vin
40 pF
1 M
50
23
50
Vout
TO SAMPLING SCOPE
50 Ω INPUT
INPUT Vin
10%
90%
50%
50%
10%
90%
90%
OUTPUT Vout
INVERTED
ton
toff
PULSE WIDTH
10 V



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