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AFV121KGS Datasheet(PDF) 3 Page - NXP Semiconductors

Part # AFV121KGS
Description  RF Power LDMOS Transistors
PDF  20 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFV121KGS Datasheet(HTML) 3 Page - NXP Semiconductors

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AFV121KH AFV121KHS AFV121KGS
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1,2) (In Freescale Narrowband Production Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ(A+B) = 100 mA, Pout = 1000 W
Peak (100 W Avg.), f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain
Gps
18.5
19.6
22.0
dB
Drain Efficiency
D
55.5
59.7
—
%
Input Return Loss
IRL
—
–15
–9
dB
Table 5. Load Mismatch/Ruggedness (In Freescale Narrowband Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type
VSWR
Pin
(W)
Test Voltage, VDD
Result
1030
Pulse
(128 sec,
10% Duty Cycle)
> 20:1 at all
Phase Angles
20.2 Peak
(3 dB Overdrive)
50
No Device
Degradation
Table 6. Ordering Information
Device
Tape and Reel Information
Package
AFV121KHR5
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
NI--1230H--4S, Eared
AFV121KHSR5
NI--1230S--4S, Earless
AFV121KGSR5
NI--1230GS--4L, Gull Wing
1. Measurement made with device in push--pull configuration.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.



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