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AFV10700GS Datasheet(PDF) 4 Page - NXP Semiconductors

Part # AFV10700GS
Description  RF Power LDMOS Transistors
PDF  19 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFV10700GS Datasheet(HTML) 4 Page - NXP Semiconductors

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RF Device Data
NXP Semiconductors
AFV10700H AFV10700HS AFV10700GS
TYPICAL CHARACTERISTICS
1
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
10
Measured with 30 mV (rms) ac @ 1 MHz
VGS =0 Vdc
Note: Each side of device measured separately.
30
40
50
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
TC, CASE TEMPERATURE (C)
100
–50
0
–25
25
50
75
100
–2.73
IDQ (mA)
Slope (mV/C)
500
–2.39
1500
–2.09
–75
0.90
0.93
0.96
0.99
1.02
1.05
1.11
1.08
100
Crss
IDQ(A+B) = 100 mA
500 mA
1000 mA
VDD =50 Vdc
250
108
90
TJ, JUNCTION TEMPERATURE (C)
Figure 4. MTTF versus Junction Temperature – Pulse
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.nxp.com/RF/calculators.
106
105
104
110
130
150
170
190
210
230
107
109
ID = 19.67 Amps
24.39 Amps
28.40 Amps
VDD =50 Vdc



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