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AFV10700GS Datasheet(PDF) 4 Page - NXP Semiconductors |
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AFV10700GS Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 19 page ![]() 4 RF Device Data NXP Semiconductors AFV10700H AFV10700HS AFV10700GS TYPICAL CHARACTERISTICS 1 020 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage 10 Measured with 30 mV (rms) ac @ 1 MHz VGS =0 Vdc Note: Each side of device measured separately. 30 40 50 Figure 3. Normalized VGS versus Quiescent Current and Case Temperature TC, CASE TEMPERATURE (C) 100 –50 0 –25 25 50 75 100 –2.73 IDQ (mA) Slope (mV/C) 500 –2.39 1500 –2.09 –75 0.90 0.93 0.96 0.99 1.02 1.05 1.11 1.08 100 Crss IDQ(A+B) = 100 mA 500 mA 1000 mA VDD =50 Vdc 250 108 90 TJ, JUNCTION TEMPERATURE (C) Figure 4. MTTF versus Junction Temperature – Pulse Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.nxp.com/RF/calculators. 106 105 104 110 130 150 170 190 210 230 107 109 ID = 19.67 Amps 24.39 Amps 28.40 Amps VDD =50 Vdc |
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