RW1C025ZP datasheet(2/13 Pages) ROHM

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RW1C025ZP

Datasheet

lThermal resistance

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

Thermal resistance, junction - ambient

RthJA*2

179

℃/W

RthJA*3

292

℃/W

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Drain - Source breakdown

voltage

V(BR)DSS VGS = 0V, ID = -1mA

-20

Breakdown voltage

temperature coefficient

　ΔV(BR)DSS　 ID = -1mA

-21.9

mV/℃

　　 ΔTj 　　 referenced to 25℃

Zero gate voltage

drain current

IDSS

VDS = -20V, VGS = 0V

-1

μA

Gate - Source leakage current

IGSS

VGS = ±10V, VDS = 0V

±10

μA

Gate threshold voltage

VGS(th)

VDS = -10V, ID = -1mA

-0.3

-1.0

Gate threshold voltage

temperature coefficient

　ΔVGS(th) 　 ID = -1mA

2.4

mV/℃

　　 ΔTj 　　 referenced to 25℃

Static drain - source

on - state resistance

RDS(on)*4

VGS = -4.5V, ID = -2.5A

mΩ

VGS = -2.5V, ID = -1.2A

VGS = -1.8V, ID = -1.2A

135

VGS = -1.5V, ID = -0.5A

120

240

Gate resistance

f = 1MHz, open drain

19.3

Forward Transfer

Admittance

|Yfs|*4

VDS = -10V, ID = -2.5A

2.2

*1 Pw≦10μs , Duty cycle≦1%

*2 Mounted on a ceramic board (30×30×0.8mm)

*3 Mounted on a FR4 (12×20×0.8mm,Cu pad:240mm2)

*4 Pulsed

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20160825 - Rev.001

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