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2SC3874 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # 2SC3874
Description  Silicon NPN triple diffusion planar type
PDF  3 Pages
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC3874 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
500
500
400
7
25
15
5
150
3.5
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
TC=25°C
Ta=25
°C
2SC3874
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q
High-speed switching
q
High collector to base voltage VCBO
q
Wide area of safe operation (ASO)
q
Satisfactory linearity of foward current transfer ratio hFE
s Absolute Maximum Ratings (T
C=25˚C)
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 10A
IC = 10A, IB = 2A
IC = 10A, IB = 2A
VCE = 10V, IC = 1A, f = 1MHz
IC = 10A, IB1 = 2A, IB2 = –4A,
VCC = 150V
min
400
15
8
typ
20
max
100
100
1.0
1.5
0.7
2.0
0.3
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0
±0.5
10.9
±0.5
123
2.0
±0.3
3.0
±0.3
1.0
±0.2
5.0
±0.3
3.0
5.45
±0.3
0.6
±0.2
1.5
2.7
±0.3
1.5
φ 3.3±0.2


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