1

Power Transistors

2SC5294, 2SC5294A

Silicon NPN triple diffusion mesa type

For horizontal deflection output

q

High breakdown voltage, and high reliability through the use of a

glass passivation layer

q

High-speed switching

q

Wide area of safe operation (ASO)

Parameter

Collector to

base voltage

Collector to

base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

Ratings

1500

1600

1500

1600

600

5

30

20

10

120

3.5

150

–55 to +150

Unit

V

V

V

V

A

A

A

W

˚C

˚C

2SC5294

2SC5294A

2SC5294

2SC5294A

Ta=25

°C

Parameter

Collector cutoff

current

Emitter cutoff current

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Storage time

Fall time

Symbol

Conditions

min

5

typ

3

1.5

0.12

max

50

50

1

1

50

12

3

1.5

2.5

0.2

Unit

µA

mA

µA

V

V

MHz

µs

µs

2SC5294

2SC5294A

2SC5294

2SC5294A

Unit: mm

1:Base

2:Collector

3:Emitter

TOP–3E Full Pack Package

15.5

±0.5

3.0

±0.3

φ3.2±0.1

5.45

±0.3

123

5.45

±0.3

1.1

±0.1

2.0

±0.2

4.0

5

°

5

°

5

°

5

°

5

°

5

°

0.7

±0.1