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2SC2951 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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2SC2951 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 1.0 mA 16 V BVCBO IC = 100 µA 25 V BVEBO IE = 100 µA 1.5 V ICBO VCB = 15 V 1.0 µµµµA IEBO VEB = 1.0 V 4.0 µA hFE VCE = 8.0 V IC = 200 mA 20 200 --- COB VCB = 10 V f = 1.0 MHz 2.9 4.0 pF S212 VCC = 8.0 V IC = 200 mA f = 1.0 GHz 3.5 dB POSC VCE = 12 V IC = 200 mA f = 7.5 GHz 630 mW NPN SILICON HIGH FREQUENCY TRANSISTOR 2SC2951 DESCRIPTION: The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. FEATURES: •••• P OSC = 630 mW Typical at 7.5 GHz •••• Omnigold™ Metallization System MAXIMUM RATINGS IC 440 mA VCE 16 V VCB 25 V PDISS 9.7 W @ TC = 25 °C TJ -65 to +200 °C TSTG -65 to +200 °C θθθθ JC 18 °C/W PACKAGE STYLE .200 2L FLG |
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