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2N60 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N60
Description  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N60 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
2N60
·
FEATURES
·
Drain current: ID= 2A@ TC=25℃
·
Drain source voltage: VDSS= 600V(Min)
·
Static drain-source on-resistance: RDS(on) = 5.0Ω(Max)
·
Fast switching
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·
APPLICATIONS
·
Switching power supplies,converters
·
AC and DC motor controls
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGSS
Gate-Source Voltage
±
30
V
ID
Drain Current-Continuous
2
A
IDM
Drain Current-Single Pulsed
8
A
PD
Total Dissipation
45
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
4.0
℃
/W
Rth(ch-a)
Channel-to-ambient thermal resistance
54
℃
/W


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