© 2004 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

800

V

V

DGR

T

800

V

V

GS

Continuous

±30

V

V

GSM

Transient

±40

V

I

D25

T

A

I

DM

T

150

A

I

AR

T

A

E

AR

T

mJ

E

AS

T

4.0

J

dv/dt

I

S

≤ I

20

V/ns

T

P

D

T

735

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.063in) from case for 10s (Plus247, TO-264) 300

°C

V

ISOL

50/60Hz, RMS t =1 min

SOT-227B

2500

V~

I

3000

V~

M

d

Mounting torque

TO-264

0.9/8 Nm/lb.in.

Terminal torque

SOT-227B

1.5/13 Nm/ib.in.

F

C

Mounting force

PLUS-247 22...130/5...30 N/lb

Weight

PLUS247

g

TO-264

10

g

SOT-227B

30

g

Power MOSFETs

Q2-Class

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Q

g

Low intrinsic R

g

Features

Double metal process for low gate

resistance

International standard packages

Epoxy meet UL 94 V-0, flammability

classification

Avalanche energy and current rated

Fast intrinsic Rectifier

miniBLOC package version with

Aluminum Nitrate isolation

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

800

V

V

GS(th)

V

2.0

4.5

V

I

GSS

V

±200 nA

I

DSS

V

T

25

°C50 µA

V

T

mA

R

DS(on)

V

220 m

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

G = Gate

D = Drain

S = Source

TAB = Drain

DS99150A(09/04)

TO-264 AA (IXFK)

S

G

D

D (TAB)

V

DSS

=

800 V

I

D25

=

38 A

R

DS(on)

=

220 m

Ω

Ω

Ω

Ω

Ω

t

≤≤≤≤ 250 ns

IXFK 38N80Q2

IXFN 38N80Q2

IXFX 38N80Q2

G

D

Preliminary Data Sheet

miniBLOC, SOT-227 B (IXFN)

E153432

G

S*

S*

D

* Either Source terminal can be used as

main or Kelvin source terminal

D (TAB)