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OP643SL Datasheet(PDF) 2 Page - TT Electronics. |
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OP643SL Datasheet(HTML) 2 Page - TT Electronics. |
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2 / 2 page ![]() © TT electronics plc Issue B 09/2017 Page 2 TT Electronics | Optek Technology, Inc. 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. NPN Silicon Phototransistor OP600 Series Absolute Maximum Ratings (TA = 25˚C unless otherwise noted) Collector-Emitter Voltage 25 V Emitter-Collector Voltage 5 V Storage Temperature Range -65° C to +150° C Operating Temperature Range -65° C to +125° C Soldering Temperature (5 seconds with soldering iron) 260° C (1)(2) Power Dissipation 50 mW (3) Continuous Collector Current 50 mA Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS IC(ON) (4) On-State Collector Current OP600A OP600B OP600C OP643SL OP644SL 1.2 0.6 0.3 4.0 7.0 - - - - - - - 1.8 1.8 1.8 8.0 22.0 VCE = 5 V, EE = 2.5 mW/cm 2(5) mA VCE = 5 V, EE = 20 mW/cm 2(5) ICEO Collector-Dark Current - - - nA VCE = 10 V, EE = 0 V(BR)CEO Collector-Emitter Breakdown Voltage 25 - - V IC = 100 μA V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IE = 100 μA VCE(SAT) (4) Collector-Emitter OP600 (A, B, C) (2)(7) OP643-644 (SL) (2)(7) - - 0.4 V IC = 0.15 mA, EE = 2.5 mW/cm 2(5) IC = 0.4 mA, EE = 20 mW/cm 2(5) tr Rise Time - 15 - µs Vcc = 5 V, IC = 0.80 mA, RL = 1 kΩ, See Test Circuit tf Fall Time - 15 - µs Vcc = 5 V, IC = 0.80 mA, RL = 1 kΩ, See Test Circuit Notes: (1) Refer to Application Bulleting 202, which discusses proper techniques for soldering pill-type devices to PCBoards. (2) No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (3) Derate linearly 0.5 mW/° C above 25° C. (4) Junction temperature maintained at 25° C. (5) For OP600A, OP600B and OP600C, light source is a GaAIAs LED, peak wavelength = 890 nm, that provides irradiance of 2.5 mW/cm 2. The source irradiance is not necessarily uniform over the entire lens area of the unit being tested. (6) For OP643SL and OP644SL, light source is an unfiltered tungsten bulb operating at CT = 2870 K or equivalent infrared source. |
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