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LM4040 Datasheet(PDF) 3 Page - Diodes Incorporated

Part # LM4040
Description  PRECISION MICROPOWER SHUNT VOLTAGE REFERENCES
PDF  12 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

LM4040 Datasheet(HTML) 3 Page - Diodes Incorporated

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LM4040
Document number: DS33195 Rev. 7 - 2
3 of 12
www.diodes.com
February 2017
© Diodes Incorporated
LM4040
Electrical Characteristics (Cont.) (Test conditions: TA = +25°C, unless otherwise specified.)
LM4040-3.0
Symbol
Parameter
Conditions
Typ
LM4040
B Limits
LM4040
C Limits
LM4040
D Limits
Unit
—
TA
VREF
Reverse Breakdown
Voltage
IR = 100µA
+25°C
3.0
—
—
—
V
Reverse Breakdown
Voltage Tolerance
IR = 100µA
+25°C
—
±6
±15
±30
mV
-40 to +85°C
±26
±34
±59
-40 to +125°C
TBD
±45
±75
IRMIN
Minimum Operating Current
—
+25°C
47
62
62
67
µA
-40 to +85°C
—
67
67
72
-40 to +125°C
70
70
75
ΔVR/ΔT
Average Reverse
Breakdown Voltage
Temperature Coefficient
IR = 10mA
-40 to +125°C
±20
—
—
—
ppm/°C
IR = 1mA
±15
±100
±100
±150
IR = 100µA
±15
—
—
—
ΔVR/ΔIR
Reverse Breakdown
Change with Current
IRMIN ≤ IR
≤ 1mA
+25°C
0.4
0.8
0.8
1.0
mV
-40 to +85°C
—
1.1
1.1
1.3
-40 to +125°C
1.1
1.1
1.3
1mA ≤ IR
≤ 15mA
+25°C
2.7
6.0
6.0
8.0
-40 to +85°C
—
9.0
9.0
11.0
-40 to +125°C
9.0
9.0
11.0
ZR
Dynamic Output
Impedance
IR = 1mA, f = 120Hz
IAC = 0.1IR
0.4
0.9
0.9
1.2
Ω
en
Noise Voltage
IR = 100µA
10Hz < f < 10kHz
35
—
—
—
µVRMS
VR
Long Term Stability (Non
Cumulative)
t = 1000Hrs, IR = 100µA
120
—
—
—
ppm
VHYST
Thermal Hysteresis
ΔT = -40°C to +125°C
0.08
—
—
—
%
Electrical Characteristics (Cont.) (Test conditions: TA = +25°C, unless otherwise specified.)
LM4040-5.0
Symbol
Parameter
Conditions
Typ
LM4040
B Limits
LM4040
C Limits
LM4040
D Limits
Units
—
TA
VREF
Reverse Breakdown
Voltage
IR = 100µA
+25°C
5.0
—
—
—
V
Reverse Breakdown
Voltage Tolerance
IR = 100µA
+25°C
—
±10
±25
±50
mV
-40 to +85°C
±43
±58
±99
-40 to +125°C
±60
±75
±125
IRMIN
Minimum Operating Current
—
+25°C
54
74
74
79
µA
-40 to +85°C
—
80
80
85
-40 to +125°C
83
83
88
ΔVR/ΔT
Average Reverse
Breakdown Voltage
Temperature Coefficient
IR = 10mA
-40 to +125°C
±30
—
—
—
ppm/°C
IR = 1mA
±20
±100
±100
±150
IR = 100µA
±20
—
—
—
ΔVR/ΔIR
Reverse Breakdown
Change with Current
IRMIN ≤ IR
≤ 1mA
+25°C
0.5
1.0
1.0
1.3
mV
-40 to +85°C
—
1.4
1.4
1.8
-40 to +125°C
1.4
1.4
1.8
1mA
≤ IR
≤ 15mA
+25°C
3.5
8.0
8.0
10.0
-40 to +85°C
—
12.0
12.0
15.0
-40 to +125°C
12.0
12.0
15.0
ZR
Dynamic Output
Impedance
IR = 1mA, f = 120Hz
IAC = 0.1IR
0.5
1.1
1.1
1.5
Ω
en
Noise Voltage
IR = 100µA
10Hz < f < 10kHz
80
—
—
—
µVRMS
VR
Long Term Stability (Non
Cumulative)
t = 1000Hrs, IR = 100µA
120
—
—
—
ppm
VHYST
Thermal Hysteresis
ΔT = -40°C to +125°C
0.08
—
—
—
%



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