OP521 datasheet(2/3 Pages) TTELEC

2 / 3 page

OPTEK Technology Inc.—

1645 Wallace Drive, Carrollton, Texas 75006

Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com

Issue 1.3

05/10

Page 2 of 3

SMD Silicon Phototransistor

OP520, OP521

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

SMD Silicon Phototransistor

OP520, OP521

Absolute Maximum Ratings

TA = 25

o C unless otherwise noted

Storage Temperature Range

-40° C to +85° C

Operating Temperature Range

-25° C to +85° C

Lead Soldering Temperature

260° C(1)

Collector-Emitter Voltage

30 V

Collector Current

20 mA

Power Dissipation

75 mW(2)

Emitter-Collector Voltage

5 V

Notes:

Solder time less than 5 seconds at temperature extreme.

De-rate linearly at 2.17 mW/° C above 25° C.

Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than

10% over the entire lens surface of the phototransistor being tested.

To Calculate typical collector dark current in µA, use the formula ICEO = 10

(0.04Ta-3.4) where Ta is the ambient temperature in ° C.

Relative On-State Collector

Current vs. Irradiance

1.0

2.0

3.0

4.0

Ee—Irradiance (mW/cm2)

80%

100%

120%

140%

160%

Relative On-State Collector Current

vs. Temperature

-25

100

Temperature—(°C)

-40°C

80°C

Electrical Characteristics (T

A = 25°C unless otherwise noted)

SYMBOL

PARAMETER

TYP

MAX

UNITS

CONDITIONS

IC(ON)

On-State Collector Current

VCE = 5.0V, Ee = 5.0mW/cm

2 (3)

VCE(SAT)

Collector-Emitter Saturation Voltage

0.4

IC = 100µA, Ee = 5.0mW/cm

2 (3)

ICEO

Collector-Emitter Dark Current

100

VCE = 5.0V, Ee = 0

(4)

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC = 100µA, Ee = 0

V(BR)ECO

Emitter-Collector Breakdown Voltage

IE = 100µA, Ee = 0

MIN

0.25

tr, tf

Rise and Fall Times

µs

IC = 1mA, RL = 1KΩ

60%

40%

5.0

6.0

7.0

90%

100%

110%

120%

130%

80%

70%

140%

8.0

20%

Normalized at Ee = 5mW/cm2

Conditions: VCE = 5V,

λ = 935nm, TA = 25 °C

Normalized at TA = 25°C .

Conditions: VCE = 5V,

λ = 935nm, TA = 25 °C

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