© 2000 IXYS All rights reserved

3 - 4

VUB 60

R

G

0

2040

6080

100

0.9

1.0

1.1

1.2

1.3

040

80

120

160

0

10

20

30

40

50

60

70

80

I

C

0.0001

0.001

0.01

0.1

1

10

0

10

20

30

40

50

60

70

0

102030

40

50

0.0

0.5

1.0

1.5

2.0

-50 -25

0

25 50 75 100 125 150

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

02

468

10

12

14

0

20

40

60

80

100

W

I

C

norm.

V

A

T

H

I

d(AV)M

°C

V

CE(sat)

T

VJ

I

C

V

CE

A

0

1020

3040

506070

0

20

40

60

80

100

120

140

P

tot

I

d(AV)M

A

W

T

A

V

T

I

E

off

t

fi

s

T

I

norm. to 4.7

W

0

40

80

120

160

°C

R

thHA

[K/W]

0.5

1

1.5

2

3

4

6

V

V

V

A

D=0.1

D=0.3

D=0.2

D=0.7

D=0.4

°C

I

I

E

off

t

fi

A

norm.

E

off

t

fi

E

off

t

fi

t

p

T

V

R

W

norm.

V

T

D=0.5

Fig. 6 Output characteristics for

Fig. 7 Saturation voltage versus

Fig. 8 Turn-off energy per pulse and

braking (IGBT)

junction temperature

fall time versus collector

normalized (IGBT)

current, normalized (IGBT)

Fig. 9 Collector current versus pulse width and duty cycle (IGBT)

Fig.10 Turn-off energy per pulse and

fall time versus R

T

H

Fig. 4 Power dissipation versus direct output current and ambient temperature

Fig. 5 Maximum forward current

(Rectifier bridge)

versus heatsink temperature

(Rectifier bridge)