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IXTH75N10L2 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTH75N10L2 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 5 page  © 2009 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 100 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ 100 V V GSS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C 75 A I DM T C = 25°C, Pulse Width Limited by TJM 225 A I A T C = 25°C 75 A E AS 2.5 J P D T C = 25°C 400 W T J -55 to +150 °C T JM +150 °C T stg -55 to +150 °C T L 1.6mm (0.063in) from Case for 10s 300 °C T SOLD Plastic Body for 10s 260 °C M d Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-247 6.0 g TO-268 4.0 g Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 250μA 100 V V GS(th) V DS = VGS, ID = 250μA 2.5 4.5 V I GSS V GS = ±20V, VDS = 0V ±100 nA I DSS V DS = VDSS, VGS = 0V 5 μA T J = 125 °C 50 μA R DS(on) V GS = 10V, ID = 0.5 • ID25 , Note 1 21 m Ω LinearL2TM Power MOSFET w/extended FBSOA IXTH75N10L2 IXTT75N10L2 DS100200(9/09) V DSS = 100V I D25 = 75A R DS(on) ≤≤≤≤≤ 21mΩ Ω Ω Ω Ω Advance Technical Information N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Features Designed for Linear Operation International Standard Packages Avalanche Rated Integrated Gate Resistor for Easy Paralleling Guaranteed FBSOA at 75 °C Advantages Easy to Mount Space Savings High Power Density Applications Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators G = Gate D = Drain S = Source Tab = Drain TO-247 (IXTH) TO-268 (IXTT) G S D (Tab) S G D (Tab) D DD D D G O O S ww R Gi O O D |
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