AOB292L datasheet(2/7 Pages) AOSMD

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AOT292L/AOB292L/AOTF292L

Symbol

Min

Typ

Max

Units

BVDSS

100

VDS=100V, VGS=0V

TJ=55°C

IGSS

±100

VGS(th)

Gate Threshold Voltage

2.3

2.8

3.4

3.7

4.5

TJ=125°C

6.1

7.4

4.2

5.3

mΩ

3.3

4.1

mΩ

3.8

4.9

mΩ

gFS

VSD

0.68

105

Ciss

6775

Coss

557

Crss

0.4

0.8

1.2

Ω

Qg(10V)

126

Qg(4.5V)

RDS(ON)

Static Drain-Source On-Resistance

Maximum Body-Diode Continuous Current(TO220F)

mΩ

VDS=5V, ID=20A

VGS=10V, ID=20A

VGS=6V, ID=20A

TO263

VGS=10V, ID=20A

TO263

Total Gate Charge

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Gate resistance

f=1MHz

IDSS

µA

Zero Gate Voltage Drain Current

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

Total Gate Charge

SWITCHING PARAMETERS

VDS=0V, VGS=±20V

Maximum Body-Diode Continuous Current(TO220/TO263)

Input Capacitance

Gate-Body leakage current

Diode Forward Voltage

DYNAMIC PARAMETERS

VGS=6V, ID=20A

TO220/TO220F

Reverse Transfer Capacitance

VGS=0V, VDS=50V, f=1MHz

VDS=VGS, ID=250µA

Output Capacitance

Forward Transconductance

TO220/TO220F

IS=1A, VGS=0V

Qg(4.5V)

Qgs

Qgd

13.5

tD(on)

11.5

tD(off)

trr

Qrr

380

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT

ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE

PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

VGS=10V, VDS=50V, ID=20A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

Turn-On DelayTime

Body Diode Reverse Recovery Charge

Body Diode Reverse Recovery Time

IF=20A, di/dt=500A/µs

Turn-Off DelayTime

Turn-Off Fall Time

VGS=10V, VDS=50V, RL=2.5Ω,

RGEN=3Ω

IF=20A, di/dt=500A/µs

Turn-On Rise Time

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation P

DSM is based on R

θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application

depends on the user's specific board design, and the maximum temperature of 175

C may be used if the PCB allows it.

B. The power dissipation P

D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Single pulse width limited by junction temperature T

J(MAX)=175°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

Rev.2.0: March 2016

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