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PAM8001 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # PAM8001
Description  ANTI-SATURATION FILTERLESS 2W CLASS-D STEREO AMPLIFIER
PDF  17 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

PAM8001 Datasheet(HTML) 4 Page - Diodes Incorporated

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PAM8001
Document number: DSxxxxx Rev. 1 - 0
4 of 17
www.diodes.com
February 2013
© Diodes Incorporated
PAM8001
A Product Line of
Diodes Incorporated
Thermal Information
Parameter
Symbol
Package
Maximum
Unit
Thermal Resistance (Junction to Ambient)
θJA
SSOP-24L
96
°C/W
Thermal Resistance (Junction to Ambient)
θJA
QFN3*3-20L
31
°C/W
Electrical Characteristics (VDD = 5V, Gain = Maximum, RL = 8Ω, @TA = +25°C, unless otherwise specified.)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Supply Voltage Range
2.5
5.5
V
IQ
Quiescent Current
No Load
11.5
15
mA
VOS
Output Offset Voltage
VIN = 0V
20
mV
RDS(ON)
Drain-Source On-State
Resistance
IDS = 0.5A
P MOSFET
0.21
Ω
N MOSFET
0.165
PO
Output Power with Anti-
Saturation
THD+N <1%
f = 1kHz, VPL = 1V
RL =8Ω
1
W
RL = 4Ω
1.9
PO
Output Power without Anti-
Saturation
THD+N <10%
f = 1kHz, VPL = 1.5V
RL =8Ω
1.35
1.5
W
RL = 4Ω
2.65
2.8
THD+N
Total Harmonic Distortion Plus
Noise
RL =8Ω, PO = 0.85W, f = 1kHz
0.08
%
RL = 4Ω, PO = 1.75W, f = 1kHz
0.08
PSRR
Power Supply Ripple Rejection
Input AC-GND, f = 1KHz,
VPP = 200mV, Gain = 6dB
70
dB
CS
Channel Separation
PO = 1W, f = 1KHz
-85
dB
fOSC
Oscillator Frequency
200
250
300
kHz
η
Efficiency
PO = 1.7W, f = 1KHz, RL = 8Ω
85
89
%
PO = 3.0W, f = 1KHz, RL = 4Ω
80
83
%
Vn
Noise
Input AC-GND
Gain = 6dB
A-Weighting
50
µV
No A-Weighting
70
SNR
Signal Noise Ratio
f = 20-20kHz, Gain = 6dB
85
dB
UVLO
Under Voltage Lock-Out
2.0
V
IMUTE
Mute Current
VMUTE = 0.3V
4.2
mA
ISHDN
Shutdown Current
VSHDN = 0V
1
µA
VSH
SHDN Input High
1.3
V
VSL
SHDN Input Low
0.65
VMH
MUTE Input High
1.3
V
VML
MUTE Input Low
0.66
VPL
VPL Threshold Voltage
Power Limit Off
1.5
Note 1
V
VREF
VREF Voltage
VDD = 2.5V to 5.5V
1.2
V
ID
VREF Drive Current
VDD = 2.5V to 5.5V
150
µA
OTP
Over Temperature Protection
150
°C
OTH
Over Temperature Hysteresis
30
°C
Note:
1. Maximum Output Power vs. VPL Voltage
VDD = 5V, RL = 4Ω, TA = +25°C
VPL (V)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
>1.5
PO (W)
0
0.04
0.11
0.21
0.34
0.50
0.68
0.94
1.28
1.52
1.90
2.15
2.40
2.8



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