PAM8003 datasheet(4/12 Pages) DIODES

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PAM8003

Document number: DS36421 Rev. 2 - 2

4 of 12

www.diodes.com

May 2017

PAM8003

Electrical Characteristics (@TA = +25°C, VDD = 5V, Gain = 24dB, RL = 8Ω, unless otherwise specified.)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

VIN

Supply Power

2.5

5.5

Output Power

THD+N = 10%, f = 1kHz, RL = 4Ω

VDD = 5.0V

2.5

THD+N = 1%, f = 1kHz, RL = 4Ω

VDD = 5.0V

2.2

THD+N = 10%, f = 1kHz, RL = 8Ω

VDD = 5.0V

1.65

THD+N = 1%, f = 1kHz, RL = 8Ω

VDD = 5.0V

1.3

THD+N

Total Harmonic Distortion Plus

Noise

VDD = 5.0V, Po = 0.5W, RL = 8Ω

f = 1kHz

0.16

VDD = 3.6V, Po = 0.5W, RL = 8Ω

0.12

VDD = 5.0V, Po = 1W, RL = 4Ω

f = 1kHz

0.17

VDD = 3.6V, Po = 1W, RL = 4Ω

0.26

PSRR

Power Supply Ripple Rejection

VDD = 5.0V, Inputs AC-Grounded with

CIN = 0.47μF, Gv = 6dB

f = 1kHz

-70

Crosstalk

VDD = 5V, Po = 0.5W, RL = 8Ω,

Gv = 20dB

f = 1kHz

-93

SNR

Signal-to-Noise

VDD = 5V, Gv = 6dB

f = 1kHz

Output Noise

VDD = 5V, Inputs AC-Grounded with

CIN = 0.47μF, GV = 6dB

A-weighting

µV

No A-weighting

Efficiency

RL = 8Ω, THD = 10%

f = 1kHz

RL = 4Ω, THD = 10%

Quiescent Current

VDD = 5.0V

No load

4.5

7.0

VDD = 3.6V

4.0

6.5

VDD = 3.0V

3.7

5.5

ISD

Shutdown Current

VDD = 2.5V to 5.5V

µA

RDS(ON)

Static Drain-to-Source On-State

Resistor

IDS = 500mA,VGS = 5V

PMOS

0.41

mΩ

NMOS

0.27

fsw

Switching Frequency

VDD = 3V to 5V

210

kHz

VOS

Output Offset Voltage

VIN = 0V, VDD = 5V

VIH

Enable Input High Voltage

VDD = 5.0V

1.5

VIL

Enable Input Low Voltage

VDD = 5.0V

0.4

OTP

Over-temperature Protection

No Load, Junction Temperature

VDD = 5V

150

°C

OTH

Over-temperature Hysterisis

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