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ZABG6003 Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZABG6003 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 8 page ![]() ZABG6003 Document number: DS38916 Rev. 1 - 2 2 of 8 www.diodes.com December 2016 © Diodes Incorporated ZABG6003 Device Description The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs with a minimum of external components whilst operating from a minimal voltage supply and using minimal current. The ZABG6003 has six FET bias stages. To optimize the system for noise and gain the drain current for two of the six stages can be programmed over the range of 4mA to 15mA. Programming the drain current of FETS D1 and D4 is achieved by a resistor connected to the RCAL1 pin. The Drain current of the remaining four FETS D2, D3, D5 and D6 are internally set to 10mA. Drain voltages of amplifier stages are set at 2.0V and are current limited to approximately current set by their associated RCAL resistors. Depletion mode FETs require a negative voltage bias supply when operated in grounded source circuits. The ZABG6003 includes an integrated switched capacitor DC-DC converter generating a regulated output of -2V to allow single supply operation. The ZABG6003 has been designed to be used with supply rails of 2.1V to 5.0V and the VDD range has been extended to 5.5V to allow for 10% supply variation. It is possible to use less than the full complement of FET bias controls, unused drain and gate connections can be left open circuit without affecting operation of the remaining bias circuits. To protect the external FETs the circuits have been designed to ensure that, under any conditions including power up/down transients, the gate drive from the bias circuits cannot exceed -2.5V. Additionally each stage has its own individual current limiter. Furthermore if the negative rail experiences a fault condition, such as overload or short circuit, the drain supply to the FETs will be limited, avoiding excessive current flow. The ZABG6003 is available in the U-QFN3030-16 (Type B) package. Device operating temperature is -40°C to +105°C to suit a wide range of environmental conditions. Pin Assignments and Descriptions (Top View) D2 G2 D3 G3 G4 D5 G5 D6 D4 VDD D1 G1 G6 RCAL1 Gnd CSUB Gnd 16 15 14 13 12 11 10 9 8 7 6 5 1 2 3 4 U-QFN3030-16 (Type B) Pin Number Pin Name Description 1 D2 Drain GaAs FET 2 2 G2 Gate GaAs FET 2 3 D3 Drain GaAs FET 3 4 G3 Gate GaAs FET 3 5 Gnd Ground 6 CSUB Negative rail reservoir capacitor 7 RCAL1 Drain current setting for D1 and D4 8 G6 Gate GaAs FET 6 9 D6 Drain GaAs FET 6 10 G5 Gate GaAs FET 5 11 D5 Drain GaAs FET 5 12 G4 Gate GaAs FET 4 13 D4 Drain GaAs FET 4 14 VDD Supply voltage 15 D1 Drain GaAs FET 1 16 G1 Gate GaAs FET 1 Pad Gnd Must be connected to Ground or No Connection |
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