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ZABG6003 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZABG6003
Description  6 STAGE FET LNA BIAS CONTROLLER
PDF  8 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZABG6003 Datasheet(HTML) 2 Page - Diodes Incorporated

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ZABG6003
Document number: DS38916 Rev. 1 - 2
2 of 8
www.diodes.com
December 2016
© Diodes Incorporated
ZABG6003
Device Description
The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs with
a minimum of external components whilst operating from a minimal voltage supply and using minimal current.
The ZABG6003 has six FET bias stages. To optimize the system for noise and gain the drain current for two of the six stages can be programmed
over the range of 4mA to 15mA. Programming the drain current of FETS D1 and D4 is achieved by a resistor connected to the RCAL1 pin. The
Drain current of the remaining four FETS D2, D3, D5 and D6 are internally set to 10mA.
Drain voltages of amplifier stages are set at 2.0V and are current limited to approximately current set by their associated RCAL resistors.
Depletion mode FETs require a negative voltage bias supply when operated in grounded source circuits. The ZABG6003 includes an integrated
switched capacitor DC-DC converter generating a regulated output of -2V to allow single supply operation. The ZABG6003 has been designed to
be used with supply rails of 2.1V to 5.0V and the VDD range has been extended to 5.5V to allow for 10% supply variation.
It is possible to use less than the full complement of FET bias controls, unused drain and gate connections can be left open circuit without
affecting operation of the remaining bias circuits.
To protect the external FETs the circuits have been designed to ensure that, under any conditions including power up/down transients, the gate
drive from the bias circuits cannot exceed -2.5V. Additionally each stage has its own individual current limiter. Furthermore if the negative rail
experiences a fault condition, such as overload or short circuit, the drain supply to the FETs will be limited, avoiding excessive current flow.
The ZABG6003 is available in the U-QFN3030-16 (Type B) package.
Device operating temperature is -40°C to +105°C to suit a wide range of environmental conditions.
Pin Assignments and Descriptions
(Top View)
D2
G2
D3
G3
G4
D5
G5
D6
D4
VDD
D1
G1
G6
RCAL1
Gnd CSUB
Gnd
16
15
14
13
12
11
10
9
8
7
6
5
1
2
3
4
U-QFN3030-16 (Type B)
Pin Number
Pin Name
Description
1
D2
Drain GaAs FET 2
2
G2
Gate GaAs FET 2
3
D3
Drain GaAs FET 3
4
G3
Gate GaAs FET 3
5
Gnd
Ground
6
CSUB
Negative rail reservoir capacitor
7
RCAL1
Drain current setting for D1 and D4
8
G6
Gate GaAs FET 6
9
D6
Drain GaAs FET 6
10
G5
Gate GaAs FET 5
11
D5
Drain GaAs FET 5
12
G4
Gate GaAs FET 4
13
D4
Drain GaAs FET 4
14
VDD
Supply voltage
15
D1
Drain GaAs FET 1
16
G1
Gate GaAs FET 1
Pad
Gnd
Must be connected to Ground or No Connection



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