86

C3013-4-98

Process C3013

Physical Characteristics

Starting Material

N <100>

N+/P+ Width/Space

3.0 / 3.0

µm

Starting Mat. Resistivity

15 - 25

Ω-cm

N+ To P+ Space

12

µm

Typ. Operating Voltage

5V

Contact To Poly Space

2.5

µm

Well Type

P-well

Contact Overlap Of Diffusion

1.5

µm

Metal Layers

1

Contact Overlap Of Poly

1.0

µm

Poly Layers

2

Metal-1 Overlap Of Contact

1.0

µm

Contact Size

2.0x2.0

µm

Minimum Pad Opening

100x100

µm

Metal-1 Width/Space

3.5 / 2.5

µm

Minimum Pad-to-Pad Spacing

55

µm

Gate Poly Width/Space

4.0 / 2.5

µm

Minimum Pad Pitch

80.0

µm

Special Feature of C3013 Process: P-well analog process with single metal CMOS 3.0

µm

technology for 10 Volt applications.